Multilayer ultraviolet reflective coating based on atomic layer deposited aluminum oxide and fluoride
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چکیده
منابع مشابه
Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide
Semiconductor nanowires have received increasing focus from researchers due to their one dimensional characteristics, which offer new horizons for device designs. Nanowire growth has been shown to yield crystalline material on non-lattice matched substrates. Concerning gallium nitride nanowires, common growth substrates have been silicon (100) and (111) substrates. This manuscript discusses the...
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We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulatorsemiconductor capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing the capacitance-voltage characteristics of atomic layer deposited Al2O3 films on GaN substrates. The conduction band offset at the Al2O3/GaN interface was calculated...
متن کاملAtomic Layer Deposition of Aluminum Oxide
I Acknowledgements II Dedication III List of Figures V
متن کاملPassivation of black silicon boron emitters with atomic layer deposited aluminum oxide
Rights: © 2013 Wiley-Blackwell. This is the post print version of the following article: Repo, Päivikki & Benick, Jan & Gastrow, Guillaume von & Vähänissi, Ville & Heinz, Friedemann D. & Schön, Jonas & Schubert, Martin C. & Savin, Hele. 2013. Passivation of black silicon boron emitters with atomic layer deposited aluminum oxide. Physica Status Solidi RRL. Volume 7, Issue 11. 950-954. DOI: 10.10...
متن کاملThe impact of thickness and thermal annealing on refractive index for aluminum oxide thin films deposited by atomic layer deposition
The aluminum oxide (Al2O3) thin films with various thicknesses under 50 nm were deposited by atomic layer deposition (ALD) on silicon substrate. The surface topography investigated by atomic force microscopy (AFM) revealed that the samples were smooth and crack-free. The ellipsometric spectra of Al2O3 thin films were measured and analyzed before and after annealing in nitrogen condition in the ...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology A
سال: 2021
ISSN: 0734-2101,1520-8559
DOI: 10.1116/6.0001010